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MSC81035M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
.REFRACTORY/ .EMI . .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
G OLD METALLIZATION T TER SITE BALLASTED :1 VSWR CAPABILITY THERMAL RESISTANCE N PUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068) epoxy sealed ORDER CODE MSC81035M BRANDING 81035M
PIN CONNECTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MSC81035M is housed in the IMPACTM package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
150 3.0 55 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.0 C/W
*Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions.
September 2, 1994
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MSC81035M
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE DYNAMIC
Symbol
I C = 10 mA I E = 1 mA I C = 10 mA VBE = 0 V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 VCE = 50 V IC = 500 mA
65 3.5 65 -- 15
-- -- -- -- --
-- -- -- 5 120
V V V mA --
Test Conditions
Value Min. Typ. Max.
Unit
POUT c PG
Note:
f = 1025 - 1150 MHz f = 1025 - 1150 MHz f = 1025 - 1150 MHz = =
10Sec 1%
PIN = 3.0 W PIN = 3.0 W PIN = 3.0 W
VCC = 50 V VCC = 50 V VCC = 50 V
35 40 10.7
40 -- 11.2
-- -- --
W % dB
Pulse W idth Duty Cycle
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER AMPLIFIER
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MSC81035M
IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN ZIN H TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L M
ZCL M FREQ. L = 1025 MHz M = 1090 MHz H = 1150 MHz ZIN () 2.6 + j 8.3 2.8 + j 8.7 3.2 + j 4.4 ZCL () 7.7 + j 2.0 7.1 + j 1.0 6.5 - j 0.5 H
L
PIN = 3.0 W VCC = 50 V Normalized to 50 ohms
TEST CIRCUIT Ref.: Dwg. No. 101 002888
All dimensions are in inches.
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MSC81035M
PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0218 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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